^^mi-conductor ^pioduati, one. 20 stern ave. springfield, new jersey 07081 u.s.a. plastic medium-power coplementary silicon transistors ...designed for general-purpose amplifier and low speed switching applications features: * collector-emitter sustaining vottage- vckxbubi = 60 v (mln) - TIP100.tip105 = 80 v (mln) - tip101tip106 = 100 v (win) - tip102.tip107 * collector-emitter saturation voltage vc?->" 2.0 v (max.) q lc = 3.0 a * monolithic construction with built-in base-emitter shunt resistor maximum ratings telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 characteristic collector-emitter voltage coiiector-base voltage emitter-base voltage collector current-continuous -peak base current total power dissipation ?tc= 25 c derate above 25c operating and storage junction temperature range symbol v?o vcbo vebo "e "cm ib pd l.tsto TIP100 tip105 60 60 tip101 tip106 ' 80 80 tip102 tip107 100 100 5.0 8.0 15 1.0 80 0.64 -65 to +150 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 1.56 unit c/w figure -1 power derating 100 40 30 20 25 50 75 100 125 tc , temperature(c) 150 npn pnp TIP100 tip105 tip101 tip106 tip102 tip107 8 ampere darlington complementary silicon power transistors 60-100 volts 80 watts to-220 pn1.base 2.collector 3.emitter 4.collector(case) dim a b c d e f g h i j k l m o millimeters f min 14.68 9.78 5.01 13.06 3.57 2.42 1 12 0.72 422 1.14 220 0.33 2.48 3.70 max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIP100, tip101, tip102 npn / tip105, tip106, tip107 pnp electrical characteristics ( tc = 25c unless otherwise noted ) characteristic symbol win max unit off characteristics collector - emitter sustaining voltage (1) (lc = 30ma.ib = 0) TIP100.tip105 tip101.tip106 tip102.tip107 collector cutoff current (ves = 30v, , = 0 ) TIP100.tip105 (vci = 40v, . = 0 ) tip101.tip106 (vei = 50v, . = 0 ) tip102.tip107 collector cutoff current ( vcb = 60 v, e = 0 ) TIP100.tip105 (vc1 = 80v, s = 0 ) tip101.tip106 (vc.= 100v.is = 0 ) tip102.tip107 emitter cutoff current (veb = 5.0v,ic=0 ) ceo(cus) 'cbo 'ebo 60 80 100 50 50 50 50 50 50 8.0 v ua ua ma on characteristics (1) dc current gain ( lc = 3.0 a, vc6 = 4.0 v ) ( lc = 8.0 a, vci = 4.0 v ) collector-emitter saturation voltage ( lc = 3.0 a, ib = 6.0 ma ) ( lc = 8.0 a, ib = 80 ma ) base-emitter on voltage ( lc = 8.0 a, vce = 4.0 v ) hi-e vce(iat) v^on, 1000 200 20000 2.0 2.5 2.8 v v dynamic characteristics small-signal current gain ( lc = 3.0 a,vce = 4.0 v, f =1.0 mhz ) output capacitance (vcb = 10 v, i- = 0 , f = 0.1 mhz ) TIP100,tip101,tip102 tip105,tip106,tip107 h* cob 4.0 300 250 pf (1) pulse test pulse width * 300 us , duty cycle < 2.0% npn TIP100 tip101 tip102 internal schematic diagram c pnp i tip105 r tip106 tip107
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